Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
classificationCPCAdditional |
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classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
filingDate |
2010-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02dba16a248303d9695e989ba1827b83 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2db504b334d4561c68f623af4ad090d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f3769b426b63ba538d17764ec607c13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba7ebbb0ccf65be47dba68d3d67faab4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8642e0486ddab20e9c8751b7235acdd8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eadab8c9432916c782390c069e14ae21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3974d9d6860dfa18cd2527d3f9a9e8a2 |
publicationDate |
2010-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2010283077-A1 |
titleOfInvention |
Light emitting diodes including optically matched substrates |
abstract |
Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666764-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653643-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013154819-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104285277-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021367112-A1 |
priorityDate |
2001-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |