Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02159 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2010-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df8d4b9d8f1925ff689d409c808fb907 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b230d86c69f120f8d128ebbdf2c7730 |
publicationDate |
2010-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2010261342-A1 |
titleOfInvention |
Semiconductor device containing a buried threshold voltage adjustment layer and method of forming |
abstract |
A method is provided for forming a semiconductor device containing a buried threshold voltage adjustment layer. The method includes providing a substrate containing an interface layer, depositing a first high-k film on the interface layer, depositing a threshold voltage adjustment layer on the first high-k film, and depositing a second high-k film on the threshold voltage adjustment layer such that the threshold voltage adjustment layer is interposed between the first and second high-k films. The semiconductor device containing a patterned gate stack is described. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8273618-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8404530-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013277766-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015021699-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793368-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010171187-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11706928-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013032899-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152264-B2 |
priorityDate |
2007-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |