http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010233881-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate 2009-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56e96fa5989c24e5f8c7a75992d64e32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d46e963a4c1ecf320dc58ee1a26fb5c
publicationDate 2010-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2010233881-A1
titleOfInvention Method of manufacturing supporting structures for stack capacitor in semiconductor device
abstract A method of manufacturing a supporting structure for a stack capacitor in a semiconductor device is provided. The method includes the following steps. The first step is providing a multi-layer structure including an etching stop layer, a silicon oxide layer and a silicon nitride layer. The second step is etching the silicon nitride layer and the silicon oxide layer to form a plurality of filling recesses in the silicon oxide layer, in which each the filling recess has a lateral surface and a bottom surface. The third step is forming a protecting layer at each the lateral surface. The fourth step is etching the silicon oxide layer to expose the etching stop layer. The fifth step is removing the protecting layer on the each lateral surface, thereby forming the supporting structure.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012064680-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10121793-B2
priorityDate 2009-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007111467-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008149987-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451818717
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5462311
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9989226
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559585
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559532
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24404

Total number of triples: 27.