http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010233881-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
filingDate | 2009-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56e96fa5989c24e5f8c7a75992d64e32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d46e963a4c1ecf320dc58ee1a26fb5c |
publicationDate | 2010-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2010233881-A1 |
titleOfInvention | Method of manufacturing supporting structures for stack capacitor in semiconductor device |
abstract | A method of manufacturing a supporting structure for a stack capacitor in a semiconductor device is provided. The method includes the following steps. The first step is providing a multi-layer structure including an etching stop layer, a silicon oxide layer and a silicon nitride layer. The second step is etching the silicon nitride layer and the silicon oxide layer to form a plurality of filling recesses in the silicon oxide layer, in which each the filling recess has a lateral surface and a bottom surface. The third step is forming a protecting layer at each the lateral surface. The fourth step is etching the silicon oxide layer to expose the etching stop layer. The fifth step is removing the protecting layer on the each lateral surface, thereby forming the supporting structure. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012064680-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10121793-B2 |
priorityDate | 2009-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.