| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-103 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068 |
| filingDate |
2010-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b85b3300838fca4a3f543b8ae07144a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7d117098aa24da8393f0983c671f335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627624c2eb0d0472fcb4013a6ab59e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9430173234e223697c182e7b1037b3a |
| publicationDate |
2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010221850-A1 |
| titleOfInvention |
Carbon-containing semiconducting devices and methods of making thereof |
| abstract |
Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices. |
| priorityDate |
2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |