| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2010-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73738727cf87504fe5aea4e3e6f9620d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8327e6d9d2763ca7c5acf33f4a46fcbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e41c2fdddaf745f8599438453c79b3fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee36f5fc0dd52aca51673d2e1c4034f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_665b5dcda9967b42f0b5478574571c9d |
| publicationDate |
2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010218894-A1 |
| titleOfInvention |
Method of Removing Metallic, Inorganic and Organic Contaminants From Chip Passivation Layer Surfaces |
| abstract |
A method of removing and/or reducing undesirable contaminants removes residues including graphitic layers, fluorinate layers, calcium sulfate (CaSO 4 ) particles, tin oxides and organotin, from a chip passivation layer surface. The method uses a plasma process with an argon and oxygen mixture with optimized plasma parameters to remove both the graphitic and fluorinated layers and to reduce the level of the inorganic/tin oxides/organotin residue from an integrated circuit wafer while keeping the re-deposition of metallic compounds is negligible. This invention discloses the plasma processes that organics are not re-deposited from polymers to solder ball surfaces and tin oxide thickness does not increase on solder balls. The ratio of argon/oxygen is from about 50% to about 99% Ar and about 1% to about 50% O 2 by volume. Incoming wafers, after treatment, are then diced to form individual chips that are employed to produce flip chip plastic ball grid array packages. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020072762-A1 |
| priorityDate |
2007-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |