| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_94624921675ed7cab820c05e5f60fedc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb65881c776965eb77d69331b3538d1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39cfe22790ecf4751ede880d3ee5c7a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea745bad57f978392305616f1836eb9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_910ec899d0817350476eeb396ca353d9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2009-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80c38d166a9a4c4cece6c19390fd0ee1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81ef3e057be6232806e6fda604c88a21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e07c25015685c47d5f0d8b2eed45ea4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_739542eee07361323cf5a32e336073f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae6a469fd5c5ecb3f39439131d855d89 |
| publicationDate |
2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010197144-A1 |
| titleOfInvention |
Methods for damage etch and texturing of silicon single crystal substrates |
| abstract |
Methods for performing damage etch and texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Damage etch with a TMAH solution followed by texturing using solution of KOH or NaOH mixed with IPA is particularly advantageous. The substitution of some of the IPA with ethylene glycol further improves results. Also disclosed is a process that combines both damage etch and texturing etch into a single step. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102230228-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076657-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8603314-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103205815-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759231-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115148850-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012267627-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9663715-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012034854-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10833210-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011275222-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013247967-A1 |
| priorityDate |
2009-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |