http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010184252-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cdd94f212dc7aef02fc1dcf28fa9b4fd |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
filingDate | 2008-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_413ef08af93f702f5eccf326b3f00983 |
publicationDate | 2010-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2010184252-A1 |
titleOfInvention | Method for manufacturing organic thin film transistor and organic thin film transistor |
abstract | A method for manufacturing an organic thin film transistor having excellent characteristics by a simple process, and an organic thin film transistor are provided. In a manufacture method of an organic thin film transistor element having a gate electrode, a gate insulation layer, an organic semiconductor layer and a source electrode and a drain electrode on a support, the method is characterized by comprising a step for forming an organic semiconductor precursor layer by applying a solution in which an organic semiconductor precursor is dissolved, and a step for forming an organic semiconductor layer by converting the organic semiconductor precursor to an organic semiconductor by exposing the organic semiconductor precursor layer to a discharging gas in a plasma state. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014246790-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10068834-B2 |
priorityDate | 2007-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.