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filingDate 2010-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70887c23808c756cbfe7ec833b98fc23
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publicationDate 2010-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2010176387-A1
titleOfInvention Organic thin-film transistor and method for manufacturing the same
abstract An organic thin-film transistor of the present invention has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer provided above a substrate, and further has a thiol compound layer composed of a benzenethiol compound and provided on a surface of the source electrode and a thiol compound layer composed of a benzenethiol compound and provided on a surface of the drain electrode. This makes it possible to provide an organic thin-film transistor whose threshold voltage can be selectively controlled without greatly affecting a current characteristic other than the threshold voltage.
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priorityDate 2009-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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