http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010173472-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
filingDate 2009-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_029e96c986265b75dc5b657a9a369964
publicationDate 2010-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2010173472-A1
titleOfInvention Method for manufacturing soi substrate and method for manufacturing semiconductor device
abstract A method for manufacturing an SOI substrate and a method for manufacturing a semiconductor device, in each of which peeling of a single crystal semiconductor layer from an end portion due to laser irradiation is suppressed, are provided. A fragile region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an accelerated ion, the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween, a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by splitting the single crystal semiconductor substrate at the fragile region, an end portion of the single crystal semiconductor layer is removed, and a surface of the single crystal semiconductor layer whose end portion has been removed is irradiated with a laser beam.
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priorityDate 2009-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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