| abstract |
A method for bonding IC die to TSV wafers includes bonding at least one singulated IC die to respective ones of a plurality of IC die on a TSV wafer that includes a top semiconductor surface and TSV precursors including embedded TSV tips to form a die-wafer stack. The die-wafer stack is thinned beginning from the bottom surface of the TSV wafer to form a thinned die-wafer stack. The thinning includes exposing the embedded TSV tips to provide electrical access thereto from the bottom surface of the TSV wafer. The thinned die-wafer stack can be singulated to form a plurality of thinned die stacks. |