| abstract |
The invention provides a method for forming a selective mask on a surface of a layer of Al X Ga Y In 1-X-Y As Z P 1-Z or Al X Ga Y In 1-X-Y N Z As 1-Z (0≦X≦1, 0≦Y≦1, 0≦Z≦1), which is a method for forming a mask with a minute width suitable for microfabrication in nano-order. n (1) An energy beam 4 a, 4 b is selectively irradiated onto a natural oxide layer 2 formed on the surface of the layer 1 of Al X Ga Y In 1-X-Y As Z P 1-Z or Al X Ga Y In 1-X-Y N Z As 1-Z . (2) Of the natural oxide layer 2 , parts other than parts onto which the energy beam 4 a, 4 b has been irradiated is removed by heating. (3) The natural oxide layer 2 of the parts onto which the energy beam 4 a, 4 b has been irradiated is partially removed by heating while alternatively carrying out a rise and fall in heating temperature. |