http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010133622-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2009-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a8daab8a4359e2fd31da1fd00719964 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d67b5558be0f9ef0fb0430504591e14 |
| publicationDate | 2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2010133622-A1 |
| titleOfInvention | Semiconductor device including MOSFET with controlled threshold voltage, and manufacturing method of the same |
| abstract | Provided is a semiconductor device including an N-MOSFET and a P-MOSFET on a semiconductor substrate. The N-MOSFET is formed on the semiconductor substrate, and includes a first gate insulating film including a first high-dielectric-constant film having a higher dielectric constant than a silicon oxide film. The P-MOSFET is formed on the semiconductor substrate, and includes a second gate insulating film including a second high-dielectric-constant film having a higher dielectric constant than a silicon oxide film. The first high-dielectric-constant film contains a first metal, and a concentration of the first metal increases from a surface of the first high-dielectric-constant film toward the semiconductor substrate. The second high-dielectric-constant film contains a second metal, and a concentration of the second metal decreases from a surface of the second high-dielectric-constant film toward the semiconductor substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109216198-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112011102606-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014361381-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921947-B1 |
| priorityDate | 2008-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.