| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_569077e4613920fdb8d4f3b51d97a3d0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-2431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0809
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D2257-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02C20-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D2257-2066 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-8659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-2431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-8662 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-86 |
| filingDate |
2007-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad83385bd3986efadf94832ca0706744 |
| publicationDate |
2010-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010074821-A1 |
| titleOfInvention |
Apparatus and method for treating a gas stream |
| abstract |
Apparatus for treating a gas stream comprises a nonthermal plasma reactor, for example a dielectric barrier discharge plasma reactor ( 30 ), containing a silicon- containing solid for reacting with a halogen-containing component of the gas stream to form a gaseous silicon halide. A sorbent bed ( 60 ) of material chosen to react with the silicon halide to form inorganic halides is located downstream from the plasma reactor. A similar bed ( 50 ) of material is located upstream from the plasma reactor to remove silicon halide and other acid gas components from the gas stream before it enters the plasma reactor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008134890-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437705-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015031199-A1 |
| priorityDate |
2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |