| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_455de1d57f61e48bb49ba3fc96c8ef52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a30627d878d2058c73e290b062e1269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82d2ea8efe44b7392078483677a39dd8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49162 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-10 |
| filingDate |
2008-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b96a46c265e0c910a560e7219e82390a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_968f0577c0734e3e322f80b0698ab374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d084a89fca8cf9b856289eaaf5a9cfb |
| publicationDate |
2010-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010068880-A1 |
| titleOfInvention |
Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| abstract |
A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer ( 11 ) on a semiconductor substrate ( 2 ) including an element region ( 2 b ), a recess step of forming a recess ( 12 ) in the insulation layer ( 11 ), a metal layer step of embedding a metal layer ( 13 ) in the recess ( 12 ), a planarization step of planarizing a surface of the insulation layer ( 11 ) and a surface of the metal layer ( 13 ) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer ( 16 ) containing at least zirconium element and nitrogen element on the surface of the insulation layer ( 11 ) and the surface of the metal layer ( 13 ) after the planarization step. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7776737-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8216433-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010038790-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014231930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11248293-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837310-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009260972-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10354914-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9640388-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015132947-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012142359-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020083258-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9236467-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11145542-B2 |
| priorityDate |
2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |