| abstract |
A technique for bonding a glass plate to an insulating material or a nonoxidized semiconductor substrate such as SiC without a bonding agent is provided. A metallized layer is formed on the insulating material or the nonoxidized semiconductor substrate such as SiC serving as a first substrate, and the metallized layer of the first substrate is bonded to a second glass substrate, which serves as a second substrate and contains ions capable of being diffused by a voltage, by anodic bonding. |