http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010035369-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2033-0095 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2009-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e87dac273a4abf0180e3b86b25b9e7d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad88806d56c02c6b5a9b8e4b37d09600 |
| publicationDate | 2010-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2010035369-A1 |
| titleOfInvention | Method for metal gate quality characterization |
| abstract | Measuring the amount of unreacted polysilicon gate material in a fully silicided (FUSI) nickel silicide gate process for metal oxide semiconductor (MOS) transistors in an integrated circuit (IC) to guide process development and monitor IC production requires a statistically significant sample size and an economical procedure. A method is disclosed which includes a novel deprocessing sequence of oxidizing the nickel followed by removing the nickel silicide by acid etching, acquiring an SEM image of a deprocessed area encompassing a multitude of gates, forming a quantifiable mask of the original gate area in the SEM image, forming a quantifiable image of the unreacted polysilicon area in the SEM image, and computing a fraction of unreacted polysilicon. |
| priorityDate | 2008-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.