| abstract |
A light emitting device is constituted by flip-chip mounting a GaN-based LED chip 100 of the following (a):n (a) the a GaN-based LED chip 100 comprising a light-transmissive substrate 101 and GaN-based semiconductor layer L formed on the light-transmissive substrate 101, wherein the GaN-based semiconductor layer L has a laminate structure containing n-type layer 102, light emitting layer 103 and p-type layer 104 in this order from the light-transmissive substrate 101 side, wherein a positive electrode E 101 is formed on the p-type layer 104, said electrode E 101 containing a light-transmissive electrode E 101 a of an oxide semiconductor and a positive contact electrode E 101 b electrically connected to the light-transmissive electrode, and the area of the positive contact electrode E 101 b is less than ½ of the area of the upper surface of the p-type layer 104. |