| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7d9a06da4531613c5e7d34a45171d87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8387c79560ae337a2e99e7bec75e7de5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d20c7a421027346b0f839c9ad997399b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac19bc4dadb8de09cb65fc8bd40cdb91 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 |
| filingDate |
2007-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0caee99d34377f200af2ee1488c0026a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_faa45723b0086277562aa73fca7af758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86a0596b0f3c1c282d2ccc7fd5060c5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37187ead96ecb88fe9c41281af1ee646 |
| publicationDate |
2010-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010015806-A1 |
| titleOfInvention |
Cmp polishing slurry, additive liquid for cmp polishing slurry, and substrate-polishing processes using the same |
| abstract |
The invention relates to a CMP polishing slurry containing cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer includes a polymer obtained by polymerizing a monomer including at least one of a carboxylic acid having an unsaturated double bond and a salt thereof, using a reducing inorganic acid salt and oxygen as a redox polymerization initiator; an additive liquid for CMP polishing slurry; and substrate-polishing processes using the same. This makes it possible to polish a silicon oxide film effectively in a CMP technique for planarizing an interlayer dielectric, a BPSG film or a shallow trench isolating insulated film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10774241-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11312882-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9567493-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8853082-B2 |
| priorityDate |
2006-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |