| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d05ac6418e80ffa7c50683d8429e225a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-673 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 |
| filingDate |
2009-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72cdd98f81c7c05a0ca0a93988925aa3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc4108feba800b8d37b9ab60856c740c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_959696792687ea35508d53cd9de47a43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48f8d8d4d0674dc5007206664b9c2090
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ca4209e3852da465f0ec678238eb578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2d435452c3131c3495f57319c067f12 |
| publicationDate |
2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010009123-A1 |
| titleOfInvention |
Czochralski Growth of Randomly Oriented Polysilicon and Use of Randomly Oriented Polysilicon Dummy Wafers |
| abstract |
Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 μm without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11254579-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9605356-B2 |
| priorityDate |
2005-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |