| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2009-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72dd6e6759cbe5aa8c986115a7247918
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b05041fcc691b32ea7a25216a4a4708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0052a957cafe7d04bf04035ecb8a873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3974d9d6860dfa18cd2527d3f9a9e8a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_021c535b45b76bb2cdd98fe04ebcacd3 |
| publicationDate |
2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010006883-A1 |
| titleOfInvention |
Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor |
| abstract |
Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263652-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220067679-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102453880-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070835-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022108266-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010163837-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8470621-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010230711-A1 |
| priorityDate |
2001-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |