http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010006874-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2008-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35dea5a5d92925bf8d679b6bd5cf8d15 |
| publicationDate | 2010-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2010006874-A1 |
| titleOfInvention | Process for production of gallium nitride-based compound semiconductor light emitting device |
| abstract | In the process for production of a gallium nitride-based compound semiconductor light emitting device, when an n-type semiconductor layer, a light emitting layer obtained by alternately stacking an n-type dopant-containing barrier layer and a well layer, and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, are grown in that order on a substrate, the ratio of the supply rates of n-type dopant and Group III element during growth of the barrier layer (M/III) is controlled to a range of 4.5×10 −7 ≦(M/III)<2.0×10 −6 in terms of the number of atoms. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103137802-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104266143-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114824012-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8896085-B2 |
| priorityDate | 2007-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.