| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2009-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_507f8fb071bdcf69fa21fda043be9efc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ae44975273746c11a18eab0cc072926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbccdf37293c2ad2b6d0edfdb7eec2a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d2ae605532f5ca619d545d7de9ef944
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b19ecd521aa74c628764386fc6e1a9a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbd615297d89fc5344fb079b75748307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db0b1fa5500958d52d0b342796aff0b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3abfedc7a32bd8e59de4c793015d863e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7af157b7c377a91ebd4b93fca611329 |
| publicationDate |
2010-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010003816-A1 |
| titleOfInvention |
Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed |
| abstract |
An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF 3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8596121-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010107758-A1 |
| priorityDate |
2005-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |