Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36cdf78d4479644fd9685fc48d3f035f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d38a76c894619c4a3d523e6ec4797cb6 |
publicationDate |
2010-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2010001352-A1 |
titleOfInvention |
Semiconductor device and method of manufacturing the same |
abstract |
A semiconductor device includes a MOSFET having: a gate electrode provided over a silicon substrate; and a first impurity diffusion region and a second impurity diffusion region provided in the silicon substrate in different sides of said first gate electrode, wherein the MOSFET has an extension region in an upper section of the first impurity diffusion region and no extension region in an upper section of the second impurity diffusion region, and has a first silicide layer over the first impurity diffusion region and has no silicide layer over the second impurity diffusion region in vicinity of a side edge of the gate electrode. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10720517-B2 |
priorityDate |
2008-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |