| abstract |
A semiconductor encapsulation material of the present invention contains a glass for metal coating which has a strain point of 480° C. or higher, a temperature corresponding to a viscosity of 10 4 dPa·s of 1,100° C. or lower, and a thermal expansion coefficient at 30 to 380° C. of 70×10 −7 to 110×10 −7 /° C. The semiconductor encapsulation material of the present invention contains no environmentally harmful substances, has a heat resistance temperature as high as 500° C. or above, and can be used for the encapsulation of metals susceptible to oxidation, e.g., Dumet. |