http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009312216-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37eb7cfa3558a58bbb336dd2190e210a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2006-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93f67a94a814472d7b48732414fd314e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28e9f208467ae6e43637bb27e9dc5d2e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b3337baeb01c4bb64cf27d711ad5bb5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40be649420da1796401939172a64c82c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9921dd3bf325870a38bd9f26a310910d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e15042a2ab48f4c69529468490c23762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e5f3e76946578b68f69ee50bb5a8f44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d74d137ceea764af5d61f0c2882907e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cdf527f9a24627ddfa300a4fff89f42 |
| publicationDate | 2009-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2009312216-A1 |
| titleOfInvention | Photoresist Stripper Composition for Semiconductor Manufacturing |
| abstract | The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist. |
| priorityDate | 2005-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 90.