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publicationDate 2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2009298298-A1
titleOfInvention Method of forming interlayer insulating film, precursor solution for forming of interlayer insulating film, cvd material for forming of interlayer insulating film and raw material for production of siloxane oligomer
abstract In a method of forming an interlayer insulating film by plasma CVD, an organic siloxane compound including one or more silicon atoms each having at least three or more units each represented by a general formula, —O—Si(R 1 R 2 )—OR 3 (wherein R 1 and R 2 are the same as or different from each other and are a methyl group, an ethyl group or a propyl group, and R 3 is the same as or different from R 1 and R 2 and is a methyl group, an ethyl group, a propyl group or a phenyl group) is used as a raw material.
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