http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009297778-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0149 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2457 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24479 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00031 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00 |
| filingDate | 2009-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80de2092d38bc1a70622c0221bfb3285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c5e95153f1fb13e2b81661b9cbb5396 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5de5714c5863f7d85857ddd6e82c921e |
| publicationDate | 2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2009297778-A1 |
| titleOfInvention | Methods for forming improved self-assembled patterns of block copolymers |
| abstract | A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009042146-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399174-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8039196-B2 |
| priorityDate | 2006-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.