http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009289309-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c78d80e9d323ad7c79518c80e0b8d16
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
filingDate 2008-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34f992243be21ab7ec9083ea267748c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7cdd7e24b33dcc03ccdefe5538908c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfc4f38d0257b1ebe753761a46f062cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21da6c1d38b466302ed325b9fa300fee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dd0a230c632a73bea41e32808e3fcde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_503b31286c7467024466a6d4f4a2998c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5841e12cf78503fcd813c621aef847c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec74d995b2bbd4c6be72f2d349b2fa0e
publicationDate 2009-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2009289309-A1
titleOfInvention Method for reducing silicide defects in integrated circuits
abstract A method for forming silicide contacts in integrated circuits (ICs) is described. A spacer pull-back etch is performed during the salicidation process to reduce the stress between the spacer and source/drain silicide contact at the spacer undercut. This prevents the propagation of surface defects into the substrate, thereby minimizing the occurrence of silicide pipe defects. The spacer pull-back etch can be performed after a first annealing step to form the silicide contacts.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103779270-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11036866-B2
priorityDate 2008-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005242376-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008237743-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6656808-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006267117-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7091106-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6673683-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6528376-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6072222-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6651578-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7208398-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4962556-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6907838-B2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID412550040
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14767304
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID129086521
http://rdf.ncbi.nlm.nih.gov/pubchem/taxonomy/TAXID363212
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426694112
http://rdf.ncbi.nlm.nih.gov/pubchem/anatomy/ANATOMYID363212
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID935
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID335
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708

Total number of triples: 47.