| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_30e8b4f9490a8978a7607847e6c17ec3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00 |
| filingDate |
2009-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e371b53f932b82dddb81f4e3833a4953 |
| publicationDate |
2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009280724-A1 |
| titleOfInvention |
Method for Polishing Semiconductor Layers |
| abstract |
The aqueous polishing method is useful for polishing semiconductor substrates including a TEOS layer and a SiOC layer. The method removes TEOS with a polishing composition having 0.05 to 50 weight percent abrasive, 0.001 to 2 weight percent lambda type carrageenan and an anionic surfactant. The lambda type carrageenan has a concentration useful for accelerating TEOS removal rate; and the anioinic surfactant is useful for suppressing removal rate of the SiOC layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013034957-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912092-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011230049-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492277-B2 |
| priorityDate |
2005-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |