| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7d7e07789f420deb308ac25b9495992
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4a86229e7ab1e5c2fe5ce8add6275dfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f5bf7ee150f58e31a5e52dcc3578fe55 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-474
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09B57-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 |
| filingDate |
2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da1042ba95621b4a6e42ed00dbb2e6dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88ea1b451233e372c7e9c01e952f3caf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cd450c9ca636f01fcf5acbd5f703e12 |
| publicationDate |
2009-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009261323-A1 |
| titleOfInvention |
N,n'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
| abstract |
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C. |
| priorityDate |
2005-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |