| abstract |
A node dielectric, an inner electrode, and a buried strap cavity are formed in the deep trench in an SOI substrate. A buried layer contact cavity is formed by lithographic methods. The buried strap cavity and the buried layer contact cavity are filled simultaneously by deposition of a conductive material, which is subsequently planarized to form a buried strap in the deep trench and a buried contact via outside the deep trench. The simultaneous formation of the buried strap and the buried contact via enables formation of a deep trench capacitor in the SOI substrate in an economic and efficient manner. |