| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G05B13-02 |
| filingDate |
2006-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd849f8e279385eab0739ae98f881300
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e66d3baa29ef2f6e1e7c5da8f232b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7e6fc41460137ff5b0f39f1fcefbb93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4610f5ab2529b881fe4c99b5415895a2 |
| publicationDate |
2009-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009246373-A1 |
| titleOfInvention |
Method of forming metallic film and program-storing recording medium |
| abstract |
A metal film with a lowered resistance by controlling a crystal structure. A tungsten film is formed through a first tungsten film formation in which a first tungsten film with amorphous content is formed by alternately executing multiple times a supplying a metal base material gas such as WF 6 gas and supplying a hydrogen compound gas such as SiH 4 gas, with a purge executed between the two gas supply by supplying an inert gas such as Ar gas or N 2 gas and a second tungsten film formation in which a second tungsten film is formed by simultaneously supplying the WF 6 gas and a reducing gas such as H 2 gas onto the first tungsten film. The amorphous content in the first tungsten film is controlled by adjusting the length of time over which the purge is executed following the SiH 4 gas supply. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013273727-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114958036-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10427931-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759928-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013182961-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10797143-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010240212-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170494-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9758367-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9640404-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399351-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017309490-A1 |
| priorityDate |
2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |