| abstract |
The present invention is directed to enhancing the bonding reliability of a bonding portion between an Al electrode of a semiconductor device and a bonding material having metal particles as a main bonding agent. In the semiconductor device, a semiconductor element and an Al electrode are connected to each other with a bonding layer made of Ag or Cu interposed therebetween, and the bonding layer and the Al electrode are bonded to each other with an amorphous layer interposed therebetween. It is possible to obtain excellent bonding strength to the Al electrode by performing a bonding process in atmospheric air by using a bonding material including a metal oxide particle with an average diameter of 1 nm to 50 μm, an acetic acid- or formic acid-based compound, and a reducing agent made of an organic material. |