| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8eaf77ce8025863531860cbf26565d6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_13fe34961ab8ce548b0e7e510473291c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-02 |
| filingDate |
2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3dac1daca9ffbd83a5c4b309d0dc222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05db97d3abb82c3dfc8b8bae33516bb0 |
| publicationDate |
2009-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009243074-A1 |
| titleOfInvention |
Semiconductor through silicon vias of variable size and method of formation |
| abstract |
A through-silicon via structure is formed by providing a substrate having a first conductive catch pad and a second conductive catch pad formed thereon. The substrate is secured to a wafer carrier. A first etch of a first type is performed on the substrate underlying each of the first and second conductive catch pads to form a first partial through-substrate via of a first diameter underlying the first conductive catch pad and a second partial through-substrate via underlying the second conductive catch pad of a second diameter that differs from the first diameter. A second etch of a second type that differs from the first type is performed to continue etching the first partial through-substrate to form equal depth first and second through-substrate vias respectively to the first and second conductive catch pads. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476176-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492911-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10352969-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11101196-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015108633-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102016219275-B3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013122694-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832953-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014133105-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600553-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8896128-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3306654-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380606-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773940-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9054064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014149274-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10515851-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109904110-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021351112-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425084-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431320-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018085262-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11139206-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202685-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022406687-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8519538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11262385-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10128403-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425347-B2 |
| priorityDate |
2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |