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Object |
| assignee |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c7041e69d917f73cd4955b969c8ccbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d4b776755687db5094d88bbf76e620c |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2008-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eafd443ef99f624eeae10e9974599672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_956e7640d6f6c1c50ab21271b68309be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee931f9b914e4de80ace58da0e33091 |
| publicationDate |
2009-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009209099-A1 |
| titleOfInvention |
Forming Diffusion Barriers by Annealing Copper Alloy Layers |
| abstract |
A method of forming an interconnect structure of an integrated circuit includes providing a semiconductor substrate; forming a dielectric layer over the semiconductor substrate; forming an opening in the dielectric layer; and forming a copper alloy seed layer in the opening. The copper alloy seed layer physically contacts the dielectric layer. The copper alloy seed layer includes copper and an alloying material. The method further includes filling a metallic material in the opening and over the copper alloy seed layer; performing a planarization to remove excess metallic material over the dielectric layer; and performing a thermal anneal to cause the alloying material in the copper alloy seed layer to be segregated from copper. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022068826-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7816266-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10224275-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019005878-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011006430-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008280151-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9112005-B2 |
| priorityDate |
2008-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |