http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009209083-A1

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publicationDate 2009-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2009209083-A1
titleOfInvention Hybrid Gap-fill Approach for STI Formation
abstract A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a conformal deposition method to fill a dielectric material into the opening; performing a first treatment on the dielectric material, wherein the first treatment provides an energy high enough for breaking bonds in the dielectric material; and performing a steam anneal on the dielectric material.
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