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publicationDate 2009-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2009142701-A1
titleOfInvention Double patterning strategy for contact hole and trench
abstract A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including at least one opening therein on the substrate; curing the first resist pattern; forming a second resist pattern on the substrate; forming a material layer on the substrate; and removing the first and second resist patterns to expose the substrate.
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Total number of triples: 37.