| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4efee27937b4a512f45809fed5293747 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 |
| filingDate |
2008-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba437c0732e326b04d3e7766ee2c9fef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdd0f76987cb9a1b8e5f6398191139ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb2a72f642f67b429eebe099e11c0061 |
| publicationDate |
2009-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009130824-A1 |
| titleOfInvention |
Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| abstract |
A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8853054-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11377755-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11702760-B2 |
| priorityDate |
2005-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |