Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31504 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1204 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1029 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-06 |
filingDate |
2009-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b0a34ff93c17713a92599f6be9ade5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b62b0f0b2c3544b20f63f2514598f12 |
publicationDate |
2009-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2009121211-A1 |
titleOfInvention |
Solution-Based Deposition Process for Metal Chalcogenides |
abstract |
A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012000594-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8741687-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013159864-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011227131-A1 |
priorityDate |
2006-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |