| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2008-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43482adf579675b55662390605365f38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3144595d2bae0a090f3bce7a313c27e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfaeb809e72fe394af22773f4704ec97 |
| publicationDate |
2009-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009115030-A1 |
| titleOfInvention |
N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films |
| abstract |
A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013193567-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10856861-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778739-B2 |
| priorityDate |
2005-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |