| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0149
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0198 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate |
2008-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_469ba2cf6b86e5380ce8f877b794be89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be19993dfb9f8661a1fe4cf4ae90a1ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a05c52541be0966304a9a6c4593e1f26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60d44bcd4fa741ce1bf16db11f2e9668
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78ebd41b7d878a0149ab3fb979a92d41 |
| publicationDate |
2009-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009107953-A1 |
| titleOfInvention |
Methods for forming surface features using self-assembling masks |
| abstract |
A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110875108-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8802482-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8945408-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101787299-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101771372-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9153457-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I570801-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I621175-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014200679-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10468268-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011111339-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8323868-B2 |
| priorityDate |
2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |