| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ba761e43f3b71e3f19779f6cdb7849ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c35049d10ec22d2570facb8bcc2a609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7272d2b571ea847167ed13bc4bbd88d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8e8545c1569c7173ea2dded481b1878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_333ec8c2c246539106d82e37fd07adb8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0149
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0198 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 |
| filingDate |
2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ad846c7df75a147a3d6f79052f2b824
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d595846fc0e8892afe63efa834af94e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c66460d981930af4527ada52e9437c16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93de0677f9be592e3552ead2fb110e03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_933b96e1a68ffc37555d9d583a794413 |
| publicationDate |
2009-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009107950-A1 |
| titleOfInvention |
forming surface features using self-assembling masks |
| abstract |
A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7906031-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8486489-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9233840-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009212016-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009214823-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8323868-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011111339-A1 |
| priorityDate |
2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |