| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9505f66a2bf4aac81b51b62fc11df18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6d33a2514f2ab81051bda293dc5f426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d845d329f10acae7a7598d3c92c174 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2008-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bc5a9735c7dac5568e527aa779d5d8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_592a9357bbc0411fa4d7e13614d48b03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4970539c6e098c5efde699396f5cffa |
| publicationDate |
2009-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009075481-A1 |
| titleOfInvention |
Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof |
| abstract |
The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the invention is to prepare the second substrate. Subsequently, the fabricating method is to deposit a buffer layer on the second substrate. Then, the fabricating method is to deposit a semiconductor material layer on the buffer layer. The buffer layer assists the epitaxial growth of the semiconductor material layer, and serves as a lift-off layer. Finally, with an etching solution, the fabricating method is to only etch the lift-off layer to debond the second substrate away from the semiconductor material layer, where the semiconductor material layer serves as the first substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2978601-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010036602-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019037331-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9899213-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009068780-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011101373-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8692260-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017338101-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107785465-A |
| priorityDate |
2007-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |