http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009057743-A1

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filingDate 2007-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2009057743-A1
titleOfInvention Integrated Circuit Including Structures Arranged at Different Densities and Method of Forming the Same
abstract A method of forming an integrated circuit includes forming first structures in a first portion of the integrated circuit and forming second structures, which are arranged more densely than the first structures, in a second portion. The first and second structures are defined by lithography processes using photomasks. At least one of the photomasks includes both openings in a first region for supporting the definition of the first structures and openings in a second region for supporting the definition of the second structures.
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Total number of triples: 32.