| abstract |
The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 30 abrasive particles, 0.001 to 5 benzenecarboxylic acid, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0 to 10 complexing agent formed during polishing and balance water. |