| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2008-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73c4dde03f6baf7c860d2852e779ef0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13387f5c520f46c5111989f4bfded025 |
| publicationDate |
2009-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009020879-A1 |
| titleOfInvention |
Wiring structure in semiconductor device and method of fabricating wiring structure in semiconductor device |
| abstract |
A wiring structure in a semiconductor device includes a first insulation layer formed on a substrate having first and second contact regions, and first and second pads extending through the first insulation layer and contacting the first and the second contact regions. The first and the second pads are higher than the first insulation layer. A blocking layer pattern is formed on the first insulation layer between the first and the second pads, the blocking layer pattern being higher than the first and the second pads. A second insulation layer is formed on the blocking layer pattern and the first and the second pads. A bit line structure is formed on the second insulation layer, the bit line structure electrically contacting the second pad. A third insulation layer is formed on the second insulation layer and the bit line structure. A plug extends through the second and the third insulation layers and contacts the first pad. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8349719-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912585-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8575011-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008246121-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8895420-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009085083-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217748-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010327357-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148260-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016319946-A1 |
| priorityDate |
2007-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |