| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_672917480f3e031e1de8681ff756bf13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0f275e5b1082ebdf727280b8e7c2e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37b984a9d8fdf6931776efd1c21bc029 |
| publicationDate |
2009-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009017633-A1 |
| titleOfInvention |
Alternative method for advanced cmos logic gate etch applications |
| abstract |
Methods for etching, such as for fabricating a CMOS logic gate are provided herein. In some embodiments, a method of etching includes (a) providing a substrate having a first stack and a second stack disposed thereupon, the first stack comprising a high-k dielectric layer, a metal layer formed over the high-k dielectric layer, and a first polysilicon layer formed over the metal layer, the second stack comprising a second polysilicon layer, wherein the first and second stacks are substantially equal in thickness; (b) simultaneously etching a first feature in the first polysilicon layer and a second feature in the second polysilicon layer until the metal layer in the first stack is exposed; (c) simultaneously etching the metal layer and second polysilicon layer to extend the respective first and second features into the first and second stacks; and (d) etching the high-k dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013214246-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018207075-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013214245-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104051338-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010062591-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013207118-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9514943-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8791001-B2 |
| priorityDate |
2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |