http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009017335-A1

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filingDate 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd92b42b2456df8925fcec9a3b638b91
publicationDate 2009-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2009017335-A1
titleOfInvention Polycrystalline silicon substrate for magnetic recording media, and magnetic recording medium
abstract The proportion of {100} crystal faces, the polish rate of which is relatively high during crystal machining, and/or the proportion of {111} crystal faces, the polish rate of which is relatively low during crystal machining, to the total area (S 0 ) of a substrate surface, is set to fall within an appropriate range. Specifically, the proportion of the total area (S {100} ) of the {100} crystal faces among crystal faces of individual crystal grains which appear on a major surface of a polycrystalline silicon substrate to the total area (S 0 ) of the substrate surface, is set not less than 10% and less than 50%. Such crystal face selection makes it possible to reduce the scale of “steps” formed due to the crystal face index dependence of polish rate, thereby to give a planar and smooth substrate surface.
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