| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ce2e51a935576961e18a8b5244eb644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e9bc34009ef315a97c23a03ac21c601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be62558447df97eceec9aaf3d84fb235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c7edf5889c86ba999c55da80488fa7cd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2008-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c41ac154c511fcd4f1722b385372f35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7774caa772dbe8bbabb656423e7a03f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51e7f310e4a302b9ced789edb9210299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a76e691ed1ec050ea90c79278dbf2e8 |
| publicationDate |
2009-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009011578-A1 |
| titleOfInvention |
Methods to fabricate mosfet devices using a selective deposition process |
| abstract |
In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10134900-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8012859-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014216585-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014331928-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9123758-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007066023-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013089962-A1 |
| priorityDate |
2003-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |