| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdfd2f14e50463b56c85334c2261db31 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate |
2007-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cd594a942c510d37c7071bbcb4e8164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3d72796b2dcbcccbba543147ebd73a0 |
| publicationDate |
2009-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009008625-A1 |
| titleOfInvention |
Optoelectronic device |
| abstract |
The present invention provides an optoelectronic device, which includes a substrate having a first surface and a second surface, and an atomization layer located therebetween; a multi-layer semiconductor layer is formed on the first surface of the substrate, which further includes a first semiconductor structure that is formed on the substrate, a second semiconductor structure, and an active layer is located between the first semiconductor structure and the second semiconductor structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102130051-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012008211-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7940484-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009323152-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8792172-B2 |
| priorityDate |
2007-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |